Infineon HEXFET N-Channel MOSFET, 6.6 A, 20 V, 8-Pin SO-8 IRF7311TRPBF
- RS Stock No.:
- 215-2583P
- Mfr. Part No.:
- IRF7311TRPBF
- Brand:
- Infineon
Save 14% when you buy 1000 units
Subtotal 100 units (supplied on a continuous strip)*
£72.60
(exc. VAT)
£87.10
(inc. VAT)
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In Stock
- 140 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 100 - 180 | £0.726 |
| 200 - 480 | £0.696 |
| 500 - 980 | £0.665 |
| 1000 + | £0.619 |
*price indicative
- RS Stock No.:
- 215-2583P
- Mfr. Part No.:
- IRF7311TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6.6 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.029 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.7V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.6 A | ||
Maximum Drain Source Voltage 20 V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.029 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.7V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With this improvement multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared for Wave soldering techniques.
Generation V technology
Ultra low on resistance
Surface mount
Fully avalanche rated
Dual N-channel MOSFET
Ultra low on resistance
Surface mount
Fully avalanche rated
Dual N-channel MOSFET
