Infineon HEXFET N-Channel MOSFET, 19 A, 200 V, 7-Pin DirectFET ISOMETRIC IRF6785MTRPBF
- RS Stock No.:
- 215-2581P
- Mfr. Part No.:
- IRF6785MTRPBF
- Brand:
- Infineon
Subtotal 10 units (supplied on a continuous strip)*
£14.56
(exc. VAT)
£17.47
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,370 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 + | £1.456 |
*price indicative
- RS Stock No.:
- 215-2581P
- Mfr. Part No.:
- IRF6785MTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 200 V | |
| Series | HEXFET | |
| Package Type | DirectFET ISOMETRIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 0.1 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 200 V | ||
Series HEXFET | ||
Package Type DirectFET ISOMETRIC | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 0.1 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon HEXFET Power MOSFET has 200V maximum drain source voltage in a DirectFET MZ package rated at 19 amperes optimized with low on resistance. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6785MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wire bonded SOIC packaging.
Latest MOSFET Silicon technology
Key parameters optimized for Class-D audio amplifier applications
Dual sided cooling compatible
Lead-Free (Qualified up to 260°C Reflow)
Key parameters optimized for Class-D audio amplifier applications
Dual sided cooling compatible
Lead-Free (Qualified up to 260°C Reflow)
