Infineon HEXFET N-Channel MOSFET, 55 A, 80 V, 7-Pin DirectFET ISOMETRIC IRF6668TRPBF
- RS Stock No.:
- 215-2578P
- Mfr. Part No.:
- IRF6668TRPBF
- Brand:
- Infineon
Subtotal 10 units (supplied on a continuous strip)*
£5.14
(exc. VAT)
£6.17
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,920 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 + | £0.514 |
*price indicative
- RS Stock No.:
- 215-2578P
- Mfr. Part No.:
- IRF6668TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 55 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | DirectFET ISOMETRIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 0.015 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.9V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 55 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type DirectFET ISOMETRIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 0.015 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.9V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon HEXFET® Power MOSFET has 80V maximum drain source voltage in a DirectFET MZ package rated at 55 amperes optimized with low on resistance. The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Ideal for High Performance Isolated Converter Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
