Infineon CoolMOS™ P7 N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-220 IPP80R450P7XKSA1
- RS Stock No.:
- 215-2550P
- Mfr. Part No.:
- IPP80R450P7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 50 units (supplied in a tube)*
£49.90
(exc. VAT)
£59.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 470 unit(s) shipping from 06 October 2025
- Plus 999,999,520 unit(s) shipping from 13 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
50 - 90 | £0.998 |
100 - 240 | £0.956 |
250 - 490 | £0.914 |
500 + | £0.851 |
*price indicative
- RS Stock No.:
- 215-2550P
- Mfr. Part No.:
- IPP80R450P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 11 A | |
Maximum Drain Source Voltage | 800 V | |
Package Type | TO-220 | |
Series | CoolMOS™ P7 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.45 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220 | ||
Series CoolMOS™ P7 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.45 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
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Best-in-class quality and reliability
Fully optimized portfolio