Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 IPP60R099P7XKSA1
- RS Stock No.:
- 215-2539P
- Mfr. Part No.:
- IPP60R099P7XKSA1
- Brand:
- Infineon
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Subtotal 25 units (supplied in a tube)*
£71.20
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£85.45
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In Stock
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Units | Per unit |
|---|---|
| 25 - 45 | £2.848 |
| 50 - 120 | £2.678 |
| 125 - 245 | £2.474 |
| 250 + | £2.306 |
*price indicative
- RS Stock No.:
- 215-2539P
- Mfr. Part No.:
- IPP60R099P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 31 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | CoolMOS™ P7 | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.099 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 117 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ± 20 V | |
| Transistor Material | Si | |
| Length | 10.36mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 15.95mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 0.9V | |
| Height | 4.57mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 600 V | ||
Series CoolMOS™ P7 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.099 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 117 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ± 20 V | ||
Transistor Material Si | ||
Length 10.36mm | ||
Maximum Operating Temperature +150 °C | ||
Width 15.95mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 0.9V | ||
Height 4.57mm | ||
Infineon CoolMOS™ P7 Series MOSFET, 31A Continuous Drain Current, 600V Drain Source Voltage - IPP60R099P7XKSA1
This MOSFET is a high-performance power component designed specifically for high-voltage applications. With a maximum continuous drain current of 31A and a maximum drain-source voltage of 600V, it is housed in a TO-220 package, making it suitable for through-hole mounting. Its exceptional specifications make it ideal for advanced electronic designs across various industries.
Features & Benefits
• Suitable for both hard and soft switching use
• Significantly reduces switching and conduction losses
• Excellent robust body diode for hard commutation
• High ESD protection exceeding 2kV for reliable performance
• Enhancement mode configuration simplifies circuit design
• Significantly reduces switching and conduction losses
• Excellent robust body diode for hard commutation
• High ESD protection exceeding 2kV for reliable performance
• Enhancement mode configuration simplifies circuit design
Applications
• Ideal for PFC (Power Factor Correction) stages
• Used in hard-switching PWM (Pulse Width Modulation)
• Applicable in resonant switching stages for various electronics
• Suitable for adapters and LCD/PDP TVs
• Utilised in lighting solutions, server equipment, and telecom systems
• Used in hard-switching PWM (Pulse Width Modulation)
• Applicable in resonant switching stages for various electronics
• Suitable for adapters and LCD/PDP TVs
• Utilised in lighting solutions, server equipment, and telecom systems
What is the significance of the low RDS(on) value in this device?
A low RDS(on) value of 0.099 ohm minimises conduction losses, enhancing the efficiency of power conversion in applications where heat generation is a concern.
How does its working temperature range impact its performance?
Operating effectively between -55°C and +150°C, it ensures reliability and stability even in extreme conditions, making it suitable for diverse environments.
Can it be used in parallel configurations?
Yes, for parallel configurations, the use of ferrite beads on the gate or separate totem poles is generally recommended to prevent oscillation and ensure stable operation.
