Infineon CoolMOS™ P7 N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK IPD80R900P7ATMA1

Subtotal 20 units (supplied on a continuous strip)*

£13.82

(exc. VAT)

£16.58

(inc. VAT)

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Packaging Options:
RS Stock No.:
215-2518P
Mfr. Part No.:
IPD80R900P7ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

800 V

Package Type

DPAK (TO-252)

Series

CoolMOS™ P7

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.

Integrated Zener diode ESD protection up to Class 2 (HBM)
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