Infineon OptiMOS™ -T2 N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK IPD100N06S403ATMA2
- RS Stock No.:
- 215-2502P
- Mfr. Part No.:
- IPD100N06S403ATMA2
- Brand:
- Infineon
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£39.15
(exc. VAT)
£47.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,340 unit(s) shipping from 06 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 90 | £0.783 |
| 100 - 240 | £0.75 |
| 250 - 490 | £0.717 |
| 500 + | £0.667 |
*price indicative
- RS Stock No.:
- 215-2502P
- Mfr. Part No.:
- IPD100N06S403ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Series | OptiMOS™ -T2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.0035 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Series OptiMOS™ -T2 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0035 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon OptiMOS®-T2 Power-Transistor has 100V maximum drain source voltage, N-Channel, Automotive MOSFET, with DPAK(TO-252)package.
N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
Ultra Low RDSon
Ultra High ID
MSL1 up to 260°C peak reflow
175°C operating temperature
Ultra Low RDSon
Ultra High ID
