Infineon CoolMOS™ C7 N-Channel MOSFET, 13 A, 600 V, 3-Pin D2PAK IPB60R180C7ATMA1

Subtotal (1 reel of 1000 units)*

£872.00

(exc. VAT)

£1,046.00

(inc. VAT)

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Units
Per unit
Per Reel*
1000 +£0.872£872.00

*price indicative

RS Stock No.:
215-2497
Mfr. Part No.:
IPB60R180C7ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Series

CoolMOS™ C7

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.18 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon 600V Cool MOS™ C7 super junction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the Cool MOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyper data centres and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by Cool MOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V Cool MOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.

Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode