Infineon OptiMOS™ 5 N-Channel MOSFET, 80 A, 80 V, 3-Pin D2PAK IPB049N08N5ATMA1

Subtotal 10 units (supplied on a continuous strip)*

£5.72

(exc. VAT)

£6.86

(inc. VAT)

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Packaging Options:
RS Stock No.:
215-2496P
Mfr. Part No.:
IPB049N08N5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ 5

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.049 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB049N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
RDS(on) reduction of up to 44%