Infineon OptiMOS™ 5 N-Channel MOSFET, 80 A, 80 V, 3-Pin D2PAK IPB049N08N5ATMA1
- RS Stock No.:
- 215-2496P
- Mfr. Part No.:
- IPB049N08N5ATMA1
- Brand:
- Infineon
Subtotal 10 units (supplied on a continuous strip)*
£5.72
(exc. VAT)
£6.86
(inc. VAT)
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In Stock
- 2,780 unit(s) ready to ship
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Units | Per unit |
---|---|
10 + | £0.572 |
*price indicative
- RS Stock No.:
- 215-2496P
- Mfr. Part No.:
- IPB049N08N5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 80 A | |
Maximum Drain Source Voltage | 80 V | |
Series | OptiMOS™ 5 | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.049 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.8V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 80 V | ||
Series OptiMOS™ 5 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.049 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineons OptiMOS™ 5 80V industrial power MOSFET IPB049N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
RDS(on) reduction of up to 44%
Ideal for high switching frequency
Output capacitance reduction of up to 44%
RDS(on) reduction of up to 44%