Infineon SIPMOS® P-Channel MOSFET, 620 mA, 60 V, 3-Pin SC-59 BSR315PH6327XTSA1

Subtotal 50 units (supplied on a continuous strip)*

£4.85

(exc. VAT)

£5.80

(inc. VAT)

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Packaging Options:
RS Stock No.:
215-2469P
Mfr. Part No.:
BSR315PH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

620 mA

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

SC-59

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon SIPMOS® Small-Signal-Transistor P-channel enhancement mode Field-Effect Transistor (FET), -20V maximum drain source voltage with SOT-23 package type. The Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. The BSS84P is a p-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly suited for low-voltage, low-current applications.

Enhancement mode
Logic level
Avalanche rated
Fast switching
Dv/dt rated
Pb-free lead-plating