Infineon OptiMOS™ N-Channel MOSFET, 95 A, 80 V, 8-Pin SuperSO8 5 x 6 BSC052N08NS5ATMA1
- RS Stock No.:
- 215-2461P
- Mfr. Part No.:
- BSC052N08NS5ATMA1
- Brand:
- Infineon
Subtotal 10 units (supplied on a continuous strip)*
£9.92
(exc. VAT)
£11.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,820 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 + | £0.992 |
*price indicative
- RS Stock No.:
- 215-2461P
- Mfr. Part No.:
- BSC052N08NS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 95 A | |
| Maximum Drain Source Voltage | 80 V | |
| Series | OptiMOS™ | |
| Package Type | SuperSO8 5 x 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0052 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 95 A | ||
Maximum Drain Source Voltage 80 V | ||
Series OptiMOS™ | ||
Package Type SuperSO8 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0052 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOSTM5Power-Transistor has 80V maximum drain source voltage with SuperSO8 5x6 package type. It has potential application as telecom server, solar, low voltage drives, light electric vehicles and adapter. It is Optimized for high performance SMPS, e.g. sync .rec and superior thermal resistance.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
