Infineon HEXFET N-Channel MOSFET, 106 A, 40 V DirectFET ISOMETRIC IRF6616TRPBF
- RS Stock No.:
- 214-9124
- Mfr. Part No.:
- IRF6616TRPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 214-9124
- Mfr. Part No.:
- IRF6616TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 106 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DirectFET ISOMETRIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Maximum Drain Source Resistance | 0.005 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.25V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 106 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DirectFET ISOMETRIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Maximum Drain Source Resistance 0.005 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.25V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to achieve low combined on-state and switching loss in a package that has the footprint of a SO-8 and only 0.7 mm profile. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Low Conduction and Switching Losses
Optimized for High Frequency Switching
Optimized for High Frequency Switching