Infineon OptiMOS™ -T2 N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK IPD90N04S403ATMA1

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Subtotal 75 units (supplied on a continuous strip)*

£39.90

(exc. VAT)

£47.85

(inc. VAT)

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75 - 135£0.532
150 - 360£0.509
375 - 735£0.487
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Packaging Options:
RS Stock No.:
214-9055P
Mfr. Part No.:
IPD90N04S403ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ -T2

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0032 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

It is Automotive AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature