Infineon CoolMOS™ CE N-Channel MOSFET, 7.2 A, 650 V, 3-Pin DPAK IPD65R1K0CEAUMA1

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Subtotal 125 units (supplied on a continuous strip)*

£63.75

(exc. VAT)

£76.25

(inc. VAT)

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125 - 225£0.51
250 - 600£0.498
625 - 1225£0.466
1250 +£0.434

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Packaging Options:
RS Stock No.:
214-9045P
Mfr. Part No.:
IPD65R1K0CEAUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

7.2 A

Maximum Drain Source Voltage

650 V

Package Type

TO-252

Series

CoolMOS™ CE

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive
Very high commutation ruggedness
Qualified for standard grade applications