Infineon OptiMOS™ 5 N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB024N10N5ATMA1
- RS Stock No.:
- 214-9009P
- Mfr. Part No.:
- IPB024N10N5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£35.82
(exc. VAT)
£42.98
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 285 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 20 | £3.582 |
| 25 - 45 | £3.344 |
| 50 - 120 | £3.104 |
| 125 + | £2.906 |
*price indicative
- RS Stock No.:
- 214-9009P
- Mfr. Part No.:
- IPB024N10N5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 180 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-263-7 | |
| Series | OptiMOS™ 5 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 0.0024 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-263-7 | ||
Series OptiMOS™ 5 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 0.0024 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.
100% avalanche tested
Qualified according to JEDEC for target applications
Qualified according to JEDEC for target applications
