Infineon OptiMOS™ N-Channel MOSFET, 50 A, 80 V, 7-Pin MG-WDSON-2 BSB104N08NP3GXUSA1
- RS Stock No.:
- 214-8967P
- Mfr. Part No.:
- BSB104N08NP3GXUSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 75 units (supplied on a continuous strip)*
£63.00
(exc. VAT)
£75.75
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,995 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 75 - 135 | £0.84 |
| 150 - 360 | £0.805 |
| 375 - 735 | £0.769 |
| 750 + | £0.716 |
*price indicative
- RS Stock No.:
- 214-8967P
- Mfr. Part No.:
- BSB104N08NP3GXUSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 80 V | |
| Series | OptiMOS™ | |
| Package Type | MG-WDSON-2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 0.0104 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 80 V | ||
Series OptiMOS™ | ||
Package Type MG-WDSON-2 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 0.0104 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon range of OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These consists of range of energy efficient MOSFET transistors, in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces.
Low parasitic inductance
Optimized technology for DC/DC converters
Dual sided cooling
Optimized technology for DC/DC converters
Dual sided cooling
