Infineon HEXFET N-Channel MOSFET, 112 A, 40 V DirectFET ISOMETRIC AUIRL7736M2TR
- RS Stock No.:
- 214-8964
- Mfr. Part No.:
- AUIRL7736M2TR
- Brand:
- Infineon
Subtotal (1 reel of 4800 units)*
£5,068.80
(exc. VAT)
£6,081.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 4800 + | £1.056 | £5,068.80 |
*price indicative
- RS Stock No.:
- 214-8964
- Mfr. Part No.:
- AUIRL7736M2TR
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 112 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DirectFET ISOMETRIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Maximum Drain Source Resistance | 0.003 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 112 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DirectFET ISOMETRIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Maximum Drain Source Resistance 0.003 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems.
Advanced Process Technology
Logic Level
High Power Density
Logic Level
High Power Density
