Infineon HEXFET N-Channel MOSFET, 523 A, 40 V, 7-Pin D2PAK-7 AUIRFSA8409-7TRL

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Subtotal 10 units (supplied on a continuous strip)*

£43.74

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£52.49

(inc. VAT)

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25 - 45£4.082
50 - 120£3.79
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Packaging Options:
RS Stock No.:
214-8963P
Mfr. Part No.:
AUIRFSA8409-7TRL
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

523 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

D2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.00069 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology
New Ultra Low On-Resistance
Automotive Qualified