Infineon HEXFET N-Channel MOSFET, 105 A, 150 V, 7-Pin D2PAK-7 AUIRFS4115-7TRL
- RS Stock No.:
- 214-8959P
- Mfr. Part No.:
- AUIRFS4115-7TRL
- Brand:
- Infineon
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Subtotal 10 units (supplied on a continuous strip)*
£45.66
(exc. VAT)
£54.79
(inc. VAT)
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In Stock
- 755 unit(s) ready to ship
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Units | Per unit |
---|---|
10 - 20 | £4.566 |
25 + | £4.108 |
*price indicative
- RS Stock No.:
- 214-8959P
- Mfr. Part No.:
- AUIRFS4115-7TRL
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 105 A | |
Maximum Drain Source Voltage | 150 V | |
Series | HEXFET | |
Package Type | D2PAK-7 | |
Mounting Type | Surface Mount | |
Pin Count | 7 | |
Maximum Drain Source Resistance | 0.0118 O | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 105 A | ||
Maximum Drain Source Voltage 150 V | ||
Series HEXFET | ||
Package Type D2PAK-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 0.0118 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced Process Technology
Ultra Low On-Resistance
Automotive Qualified
Ultra Low On-Resistance
Automotive Qualified