Infineon HEXFET N-Channel MOSFET, 105 A, 150 V, 7-Pin D2PAK-7 AUIRFS4115-7TRL

Subtotal (1 reel of 800 units)*

£1,752.00

(exc. VAT)

£2,104.00

(inc. VAT)

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Units
Per unit
Per Reel*
800 +£2.19£1,752.00

*price indicative

RS Stock No.:
214-8958
Mfr. Part No.:
AUIRFS4115-7TRL
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

105 A

Maximum Drain Source Voltage

150 V

Series

HEXFET

Package Type

D2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.0118 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology
Ultra Low On-Resistance
Automotive Qualified