Infineon HEXFET N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK AUIRFR540Z

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£79.75

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£95.70

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100 - 240£1.436
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Packaging Options:
RS Stock No.:
214-8953P
Mfr. Part No.:
AUIRFR540Z
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0285 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology
Ultra Low On-Resistance
Automotive Qualified