Infineon HEXFET N-Channel MOSFET, 18 A, 150 V DirectFET ISOMETRIC AUIRF7675M2TR

Bulk discount available

Subtotal 50 units (supplied on a continuous strip)*

£87.40

(exc. VAT)

£104.90

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 4,800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
50 - 90£1.748
100 - 240£1.674
250 - 490£1.601
500 +£1.49

*price indicative

Packaging Options:
RS Stock No.:
214-8950P
Mfr. Part No.:
AUIRF7675M2TR
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

150 V

Series

HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

0.056 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems. These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.

Advanced Process Technology
175°C Operating Temperature