Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin I2PAK IRF3205ZLPBF
- RS Stock No.:
- 214-4448P
- Mfr. Part No.:
- IRF3205ZLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 50 units (supplied in a tube)*
£64.80
(exc. VAT)
£77.75
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 5,250 unit(s), ready to ship
Units | Per unit |
---|---|
50 - 90 | £1.296 |
100 - 240 | £1.241 |
250 - 490 | £1.187 |
500 + | £1.105 |
*price indicative
- RS Stock No.:
- 214-4448P
- Mfr. Part No.:
- IRF3205ZLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 110 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | I2PAK (TO-262) | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.0065 Ω | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type I2PAK (TO-262) | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0065 Ω | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche
It is lead-free