Infineon HEXFET N-Channel MOSFET, 82 A, 75 V, 3-Pin D2PAK IRF2807STRLPBF
- RS Stock No.:
- 214-4444P
- Mfr. Part No.:
- IRF2807STRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£58.45
(exc. VAT)
£70.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,050 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
50 - 90 | £1.169 |
100 - 240 | £1.119 |
250 - 490 | £1.07 |
500 + | £0.996 |
*price indicative
- RS Stock No.:
- 214-4444P
- Mfr. Part No.:
- IRF2807STRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 82 A | |
Maximum Drain Source Voltage | 75 V | |
Package Type | D2PAK (TO-263) | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.013 Ω | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 82 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.013 Ω | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
This Infineon HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides reliable and efficient device
It is fully avalanche rated