Infineon HEXFET Type N-Channel MOSFET, 180 A, 40 V, 3-Pin TO-263

Subtotal 10 units (supplied on a continuous strip)*

£9.68

(exc. VAT)

£11.62

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 3,140 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
10 +£0.968

*price indicative

Packaging Options:
RS Stock No.:
214-4442P
Mfr. Part No.:
IRF1404ZSTRLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.7mΩ

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

150nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

200W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche

It is lead-free