Infineon OptiMOS™ 3 N-Channel MOSFET, 96 A, 200 V, 8-Pin HSOF-8 IPT111N20NFDATMA1
- RS Stock No.:
- 214-4424P
- Mfr. Part No.:
- IPT111N20NFDATMA1
- Brand:
- Infineon
Subtotal 2 units (supplied on a continuous strip)*
£8.86
(exc. VAT)
£10.64
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,498 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 2 + | £4.43 |
*price indicative
- RS Stock No.:
- 214-4424P
- Mfr. Part No.:
- IPT111N20NFDATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 96 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | HSOF-8 | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0111 Ω | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 96 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type HSOF-8 | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0111 Ω | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
This Infineon OptiMOS 3 MOSFET is perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
It is RoHS compliant
