Infineon CoolMOS™ CE N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK IPD80R1K4CEATMA1
- RS Stock No.:
- 214-4396P
- Mfr. Part No.:
- IPD80R1K4CEATMA1
- Brand:
- Infineon
Subtotal 15 units (supplied on a continuous strip)*
£9.57
(exc. VAT)
£11.49
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,980 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
15 + | £0.638 |
*price indicative
- RS Stock No.:
- 214-4396P
- Mfr. Part No.:
- IPD80R1K4CEATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 3.9 A | |
Maximum Drain Source Voltage | 800 V | |
Series | CoolMOS™ CE | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1.4 Ω | |
Maximum Gate Threshold Voltage | 3.9V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.9 A | ||
Maximum Drain Source Voltage 800 V | ||
Series CoolMOS™ CE | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.4 Ω | ||
Maximum Gate Threshold Voltage 3.9V | ||
Number of Elements per Chip 1 | ||
This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level.
It is RoHS compliant