STMicroelectronics STD11N60M6 N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK STD11N60M6
- RS Stock No.:
- 212-2104
- Mfr. Part No.:
- STD11N60M6
- Brand:
- STMicroelectronics
Subtotal (1 reel of 2500 units)*
£1,637.50
(exc. VAT)
£1,965.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 11 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.655 | £1,637.50 |
*price indicative
- RS Stock No.:
- 212-2104
- Mfr. Part No.:
- STD11N60M6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 8 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | DPAK (TO-252) | |
Series | STD11N60M6 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.5 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.75V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type DPAK (TO-252) | ||
Series STD11N60M6 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.75V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
MDMesh M6 MOSFET N-CH
The STMicroelectronics MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. It builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
Lower RDS(on) per area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected