STMicroelectronics N-Channel MOSFET, 12 A, 600 V, 3-Pin DPAK STD15N60DM6

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Subtotal 50 units (supplied on a continuous strip)*

£79.20

(exc. VAT)

£95.05

(inc. VAT)

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Units
Per unit
50 - 95£1.584
100 - 245£1.238
250 - 995£1.216
1000 +£0.904

*price indicative

Packaging Options:
RS Stock No.:
210-8742P
Mfr. Part No.:
STD15N60DM6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

338 mΩ

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected