STMicroelectronics N-Channel MOSFET, 10 A, 600 V, 3-Pin DPAK STD12N60DM6

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Subtotal (1 pack of 5 units)*

£8.09

(exc. VAT)

£9.71

(inc. VAT)

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  • Shipping from 12 February 2026
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Units
Per unit
Per Pack*
5 - 45£1.618£8.09
50 - 95£1.382£6.91
100 - 245£1.086£5.43
250 - 995£1.06£5.30
1000 +£0.782£3.91

*price indicative

Packaging Options:
RS Stock No.:
210-8740
Mfr. Part No.:
STD12N60DM6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

390 mΩ

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected