Vishay E N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK SIHU2N80AE-GE3
- RS Stock No.:
- 210-4997P
- Mfr. Part No.:
- SIHU2N80AE-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£31.10
(exc. VAT)
£37.30
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 2,700 unit(s) shipping from 10 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 240 | £0.311 |
| 250 - 490 | £0.303 |
| 500 - 990 | £0.295 |
| 1000 + | £0.287 |
*price indicative
- RS Stock No.:
- 210-4997P
- Mfr. Part No.:
- SIHU2N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.9 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | E | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.5 Ω | |
| Maximum Gate Threshold Voltage | 2 → 4V | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.9 A | ||
Maximum Drain Source Voltage 800 V | ||
Series E | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.5 Ω | ||
Maximum Gate Threshold Voltage 2 → 4V | ||
Number of Elements per Chip 1 | ||
The Vishay E Series Power MOSFET has IPAK (TO-251) package type.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection