Vishay E N-Channel MOSFET, 8 A, 800 V, 3-Pin TO-247AC SIHG11N80AE-GE3
- RS Stock No.:
- 210-4982P
- Mfr. Part No.:
- SIHG11N80AE-GE3
- Brand:
- Vishay
Subtotal 5 units (supplied in a tube)*
£10.64
(exc. VAT)
£12.77
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 1,500 unit(s) shipping from 06 October 2025
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Units | Per unit |
---|---|
5 + | £2.128 |
*price indicative
- RS Stock No.:
- 210-4982P
- Mfr. Part No.:
- SIHG11N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 8 A | |
Maximum Drain Source Voltage | 800 V | |
Series | E | |
Package Type | TO-247AC | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.391 Ω | |
Maximum Gate Threshold Voltage | 2 → 4V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 800 V | ||
Series E | ||
Package Type TO-247AC | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.391 Ω | ||
Maximum Gate Threshold Voltage 2 → 4V | ||
Number of Elements per Chip 1 | ||
The Vishay E Series Power MOSFET has TO-247AC package type with single configuration.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection