Vishay E N-Channel MOSFET, 17.4 A, 800 V, 3-Pin D2PAK SIHB21N80AE-GE3
- RS Stock No.:
- 210-4977P
- Mfr. Part No.:
- SIHB21N80AE-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied in a tube)*
£117.70
(exc. VAT)
£141.25
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2,790 unit(s), ready to ship
Units | Per unit |
---|---|
50 - 120 | £2.354 |
125 - 245 | £2.066 |
250 - 495 | £1.91 |
500 + | £1.648 |
*price indicative
- RS Stock No.:
- 210-4977P
- Mfr. Part No.:
- SIHB21N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 17.4 A | |
Maximum Drain Source Voltage | 800 V | |
Package Type | D2PAK (TO-263) | |
Series | E | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.205 Ω | |
Maximum Gate Threshold Voltage | 2 → 4V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 17.4 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type D2PAK (TO-263) | ||
Series E | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.205 Ω | ||
Maximum Gate Threshold Voltage 2 → 4V | ||
Number of Elements per Chip 1 | ||
The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with 17.4 A drain current.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)