Vishay EF N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK SiHB186N60EF-GE3

Bulk discount available

Subtotal 50 units (supplied in a tube)*

£139.50

(exc. VAT)

£167.50

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 175 unit(s), ready to ship
Units
Per unit
50 - 120£2.79
125 - 245£2.48
250 - 495£2.264
500 +£1.95

*price indicative

Packaging Options:
RS Stock No.:
210-4975P
Mfr. Part No.:
SiHB186N60EF-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.4 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Series

EF

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.168 Ω

Maximum Gate Threshold Voltage

3 → 5V

Number of Elements per Chip

1

The Vishay EF Series Power MOSFET With Fast Body Diode has D2PAK (TO-263) package type.

4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)