Vishay E N-Channel MOSFET, 13 A, 800 V, 3-Pin D2PAK SIHB15N80AE-GE3
- RS Stock No.:
- 210-4970P
- Mfr. Part No.:
- SIHB15N80AE-GE3
- Brand:
- Vishay
Subtotal 5 units (supplied in a tube)*
£10.04
(exc. VAT)
£12.05
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,990 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 + | £2.008 |
*price indicative
- RS Stock No.:
- 210-4970P
- Mfr. Part No.:
- SIHB15N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | D2PAK (TO-263) | |
| Series | E | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.304 Ω | |
| Maximum Gate Threshold Voltage | 2 → 4V | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 13 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type D2PAK (TO-263) | ||
Series E | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.304 Ω | ||
Maximum Gate Threshold Voltage 2 → 4V | ||
Number of Elements per Chip 1 | ||
The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with 13 A drain current.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
