Vishay N-Channel MOSFET, 204 A, 60 V, 8-Pin PowerPAK SO-8DC SiDR626LDP-T1-RE3
- RS Stock No.:
- 210-4957P
- Mfr. Part No.:
- SiDR626LDP-T1-RE3
- Brand:
- Vishay
Subtotal 5 units (supplied on a continuous strip)*
£12.40
(exc. VAT)
£14.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5,685 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 + | £2.48 |
*price indicative
- RS Stock No.:
- 210-4957P
- Mfr. Part No.:
- SiDR626LDP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 204 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PowerPAK SO-8DC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0012 Ω | |
| Maximum Gate Threshold Voltage | 1 → 2.5V | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 204 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PowerPAK SO-8DC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0012 Ω | ||
Maximum Gate Threshold Voltage 1 → 2.5V | ||
Number of Elements per Chip 1 | ||
The Vishay N-Channel 60 V (D-S) MOSFET has PowerPAK SO-8DC package type.
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
Top side cooling feature provides additional venue for thermal transfer
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
Top side cooling feature provides additional venue for thermal transfer