Vishay SiZ998BDT Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 SIZ998BDT-T1-GE3
- RS Stock No.:
- 204-7265
- Mfr. Part No.:
- SIZ998BDT-T1-GE3
- Brand:
- Vishay
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 204-7265
- Mfr. Part No.:
- SIZ998BDT-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 94.6 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | SiZ998BDT | |
| Package Type | PowerPAIR 6 x 5 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.00439 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Number of Elements per Chip | 2 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 94.6 A | ||
Maximum Drain Source Voltage 30 V | ||
Series SiZ998BDT | ||
Package Type PowerPAIR 6 x 5 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.00439 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Number of Elements per Chip 2 | ||
The Vishay Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode is a SkyFET low side MOSFET with integrated Schottky. It has a very low RDS x Qg FOM improves efficiency.
100 % Rg and UIS tested
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