Vishay SiSS80DN N-Channel MOSFET, 169 A, 20 V, 8-Pin PowerPAK 1212-8S SISS80DN-T1-GE3
- RS Stock No.:
- 204-7261
- Mfr. Part No.:
- SISS80DN-T1-GE3
- Brand:
- Vishay
Discontinued
- RS Stock No.:
- 204-7261
- Mfr. Part No.:
- SISS80DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 169 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | PowerPAK 1212-8S | |
| Series | SiSS80DN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.00092 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 169 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type PowerPAK 1212-8S | ||
Series SiSS80DN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.00092 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Number of Elements per Chip 1 | ||
The Vishay N-Channel 20 V (D-S) MOSFET is less than 0.92 mO in a package footprint of 10.89 mm2. It has optimized Qg, Qgd, and Qgd/Qgs ratio reduce switching related power loss.
100 % Rg and UIS tested
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