onsemi NVH SiC N-Channel MOSFET Transistor, 102 A, 1200 V, 4-Pin TO-247-4 NVH4L020N120SC1

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Subtotal 10 units (supplied in a tube)*

£303.90

(exc. VAT)

£364.70

(inc. VAT)

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10 - 99£30.39
100 +£26.35

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Packaging Options:
RS Stock No.:
202-5735P
Mfr. Part No.:
NVH4L020N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

102 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Series

NVH

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.028 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 20 mΩ, TO247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance