onsemi NTH SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 3-Pin TO-247 NTHL160N120SC1

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Subtotal 20 units (supplied in a tube)*

£90.80

(exc. VAT)

£109.00

(inc. VAT)

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20 - 198£4.54
200 +£3.935

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Packaging Options:
RS Stock No.:
202-5707P
Mfr. Part No.:
NTHL160N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

1200 V

Series

NTH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.11 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Transistor Material

SiC

Number of Elements per Chip

1

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 17 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.

160mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant