SiC N-Channel MOSFET Transistor, 60 A, 1200 V, 4-Pin TO-247-4 onsemi NTHL040N120SC1
- RS Stock No.:
- 202-5705
- Mfr. Part No.:
- NTHL040N120SC1
- Brand:
- onsemi
450 In stock - FREE next working day delivery available
Added
Price Each (In a Pack of 2)
£19.13
(exc. VAT)
£22.96
(inc. VAT)
| Units | Per unit | Per Pack* |
| 2 - 8 | £19.13 | £38.26 |
| 10 - 24 | £17.605 | £35.21 |
| 26 - 98 | £16.87 | £33.74 |
| 100 - 248 | £14.58 | £29.16 |
| 250 + | £14.135 | £28.27 |
| *price indicative | ||
- RS Stock No.:
- 202-5705
- Mfr. Part No.:
- NTHL040N120SC1
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.
40mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247-4 |
| Series | NTH |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 0.056 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.3V |
| Transistor Material | SiC |
| Number of Elements per Chip | 1 |