onsemi NTH SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247-4 NTH4L160N120SC1
- RS Stock No.:
- 202-5703P
- Mfr. Part No.:
- NTH4L160N120SC1
- Brand:
- onsemi
Subtotal 2 units (supplied in a tube)*
£5.79
(exc. VAT)
£6.948
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 430 unit(s), ready to ship
Units | Per unit |
|---|---|
| 2 + | £2.895 |
*price indicative
- RS Stock No.:
- 202-5703P
- Mfr. Part No.:
- NTH4L160N120SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17.3 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Series | NTH | |
| Package Type | TO-247-4 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.224 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.3V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 17.3 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series NTH | ||
Package Type TO-247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.224 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.3V | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.
160mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant