onsemi NTH SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247-4 NTH4L080N120SC1

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Subtotal 20 units (supplied in a tube)*

£94.30

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£113.16

(inc. VAT)

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Packaging Options:
RS Stock No.:
202-5701P
Mfr. Part No.:
NTH4L080N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Series

NTH

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.11 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in uninterruptible power supply, Boost inverter, Industrial Motor Drive, PV Charger.

110mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant