onsemi NTH SiC N-Channel MOSFET Transistor, 84 A, 1200 V, 4-Pin TO-247-4 NTH4L020N120SC1
- RS Stock No.:
- 202-5697P
- Mfr. Part No.:
- NTH4L020N120SC1
- Brand:
- onsemi
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£151.40
(exc. VAT)
£181.70
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 10 - 99 | £15.14 |
| 100 + | £13.12 |
*price indicative
- RS Stock No.:
- 202-5697P
- Mfr. Part No.:
- NTH4L020N120SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 84 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Series | NTH | |
| Package Type | TO-247-4 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.028 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.3 | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 84 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series NTH | ||
Package Type TO-247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.028 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.3 | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.
20mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant