STMicroelectronics SCT SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG

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Subtotal 50 units (supplied on a continuous strip)*

£1,103.50

(exc. VAT)

£1,324.00

(inc. VAT)

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Per unit
50 - 99£22.07
100 - 249£21.50
250 - 499£20.94
500 +£20.42

*price indicative

Packaging Options:
RS Stock No.:
202-5481P
Mfr. Part No.:
SCTH100N65G2-7AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

98 A

Maximum Drain Source Voltage

650 V

Package Type

H2PAK-7

Series

SCT

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.02 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Transistor Material

SiC

Number of Elements per Chip

1

The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

Very fast and robust intrinsic body diode
Low capacitance