The Infineon 6 mO, 1200 V half bridge module with Silicon Carbide MOSFET, It has NTC temperature sensor and PressFIT contact technology. It is also available with thermal interface material.
High current density Low inductive design Low switching losses RoHS-compliant modules
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
200 A
Maximum Drain Source Voltage
1200 V
Series
CoolSiC
Package Type
AG-EASY2B
Mounting Type
Screw Mount
Maximum Drain Source Resistance
0.00825 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.55V
Transistor Material
SiC
Number of Elements per Chip
2
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