Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B Infineon FF6MR12W2M1B11BOMA1
- RS Stock No.:
- 201-2810
- Mfr. Part No.:
- FF6MR12W2M1B11BOMA1
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 201-2810
- Mfr. Part No.:
- FF6MR12W2M1B11BOMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon 6 mO, 1200 V half bridge module with Silicon Carbide MOSFET, It has NTC temperature sensor and PressFIT contact technology. It is also available with thermal interface material.
High current density
Low inductive design
Low switching losses
RoHS-compliant modules
Low inductive design
Low switching losses
RoHS-compliant modules
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 200 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | AG-EASY2B |
| Mounting Type | Screw Mount |
| Maximum Drain Source Resistance | 0.00825 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.55V |
| Transistor Material | SiC |
| Number of Elements per Chip | 2 |
| Series | CoolSiC |