SiC N-Channel MOSFET, 56 A, 1200 V, 3-Pin PG-TO247-3 Infineon IMW120R030M1HXKSA1
- RS Stock No.:
- 201-2807
- Mfr. Part No.:
- IMW120R030M1HXKSA1
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 201-2807
- Mfr. Part No.:
- IMW120R030M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 56 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.056 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.7V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
| Series | CoolSiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 56 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.056 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.7V | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
Series CoolSiC | ||
The Infineon 30 mO SiC MOSFET build on a state of the trench semiconductor process helped to combine performance with reliability. It can be used in solutions for solar energy systems, Electron volt charging, Uninterruptible power supply (UPS), Power Supplies, Motor Control and Drives and many other applications.
Powerful body diode for hard commutation
Fully controllable dV/dt
0V turn-off gate voltage for easy and simple gate drive
Broad gate-source voltage range
Fully controllable dV/dt
0V turn-off gate voltage for easy and simple gate drive
Broad gate-source voltage range
