onsemi N-Channel MOSFET, 224 A, 60 V, 8-Pin DFN8 5 x 6 NVMFSC1D6N06CL
- RS Stock No.:
- 195-2675P
- Mfr. Part No.:
- NVMFSC1D6N06CL
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£256.40
(exc. VAT)
£307.70
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2,990 unit(s), ready to ship
Units | Per unit |
|---|---|
| 100 - 240 | £2.564 |
| 250 + | £2.223 |
*price indicative
- RS Stock No.:
- 195-2675P
- Mfr. Part No.:
- NVMFSC1D6N06CL
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 224 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DFN8 5 x 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 2.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 166 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Length | 5.9mm | |
| Typical Gate Charge @ Vgs | 91 nC @ 10 V | |
| Width | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 0.95mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 224 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DFN8 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 2.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 166 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Length 5.9mm | ||
Typical Gate Charge @ Vgs 91 nC @ 10 V | ||
Width 5mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.2V | ||
Height 0.95mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive Power MOSFET in a 5x6mm flat lead, dual cool package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
PPAP Capable
Application
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Reverser Battery protection
Switching power supplies
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
PPAP Capable
Application
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Reverser Battery protection
Switching power supplies