onsemi Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN NVMFD6H840NLT1G
- RS Stock No.:
- 195-2669P
- Mfr. Part No.:
- NVMFD6H840NLT1G
- Brand:
- onsemi
Subtotal 15 units (supplied on a continuous strip)*
£10.875
(exc. VAT)
£13.05
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2,985 unit(s), ready to ship
Units | Per unit |
|---|---|
| 15 + | £0.725 |
*price indicative
- RS Stock No.:
- 195-2669P
- Mfr. Part No.:
- NVMFD6H840NLT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 74 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 8.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 3.1 W | |
| Transistor Configuration | Dual | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V | |
| Number of Elements per Chip | 2 | |
| Length | 6.1mm | |
| Width | 5.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 74 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 8.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 3.1 W | ||
Transistor Configuration Dual | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 32 nC @ 10 V | ||
Number of Elements per Chip 2 | ||
Length 6.1mm | ||
Width 5.1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 1.05mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
NVMFS5C410NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
NVMFS5C410NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)