onsemi N-Channel MOSFET, 313 A, 40 V, 8-Pin DFN NTMFSC0D9N04CL
- RS Stock No.:
- 195-2664P
- Mfr. Part No.:
- NTMFSC0D9N04CL
- Brand:
- onsemi
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Subtotal 100 units (supplied on a continuous strip)*
£97.70
(exc. VAT)
£117.20
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 04 March 2026
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Units | Per unit |
|---|---|
| 100 - 240 | £0.977 |
| 250 + | £0.847 |
*price indicative
- RS Stock No.:
- 195-2664P
- Mfr. Part No.:
- NTMFSC0D9N04CL
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 313 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 850 μΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 167 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 143 @ 10 V nC | |
| Length | 5.9mm | |
| Width | 5mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.95mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 313 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 850 μΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 167 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 143 @ 10 V nC | ||
Length 5.9mm | ||
Width 5mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.95mm | ||
Forward Diode Voltage 1.2V | ||
This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Top and bottom sided exposed in standard 5x6mm pin-out
Improved thermal dissipation through top and bottom side of the package
Ultra low RDS-on
Reduced conduction loss
Reduced capacitances and package inductance
Reduced switching loss
Application
Synchronous Rectifier in AC-DC and DC-DC power supplies
Motor Switch
Load switch
Improved thermal dissipation through top and bottom side of the package
Ultra low RDS-on
Reduced conduction loss
Reduced capacitances and package inductance
Reduced switching loss
Application
Synchronous Rectifier in AC-DC and DC-DC power supplies
Motor Switch
Load switch